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SI5403DC-T1-GE3

Part No SI5403DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1340pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 6.3W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 7.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028569-SI5403DC-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si5403DC
Introduction Date July 29, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI5403DC-T1-GE3 CAD Model

Description

The Vishay Si5403DC is a P-Channel MOSFET that comes in a 1206-8 ChipFET package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6A (Tc) @ 25°C
  • Max Gate Charge: 42nC @ 10V
  • Max Input Capacitance: 1340pF @ 15V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 30 mOhm @ 7.2A, 10V
  • Halogen Free: Compliant
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3832 $51.7320
320+ $0.3144 $100.6080
495+ $0.3046 $150.7770
680+ $0.2948 $200.4640
880+ $0.2849 $250.7120
1,175+ $0.2555 $300.2125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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