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Same model may have multiple batches, images only for reference.
SI5406DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5406DC-T1-E3

Part No SI5406DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 6.9A 1206-8
Datasheet
SI5406DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 1.2mA (Min)
Max Gate Charge 20nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 6.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 101416-SI5406DC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5406DC-T1-E3 CAD Model

Description

The Vishay SI5406DC-T1-E3 is an N-Channel MOSFET with a drain-source breakdown voltage of 12V and a continuous drain current of 6.9A (Ta).

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 6.9A (Ta)
  • Gate-Source Threshold Voltage: 600mV @ 1.2mA (Min)
  • Maximum Rds On: 20 mOhm @ 6.9A, 4.5V
  • Power Dissipation: 1.3W (Ta)
  • Package: 1206-8 ChipFET
  • Dimensions: 8-SMD, flat lead
  • Drive Voltage: 2.5V, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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