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SI5414DC-T1-GE3

Part No SI5414DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 17mOhm @ 9.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 10 V
Power Dissipation (Max) 2.5W (Ta), 6.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
Base Product Number SI5414
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277533-SI5414DC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5414DC-T1-GE3 CAD Model

Description

The Vishay Siliconix SI5414DC-T1-GE3 is a high-performance N-channel MOSFET transistor that is part of the TrenchFET series.

  • Package: 1206-8 ChipFET package
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 6A @ 25°C
  • On-Resistance: 17mOhm @ 9.9A and 4.5V
  • Gate Charge: 41nC @ 10V
  • Input Capacitance: 1500pF @ 10V
  • Maximum Power Dissipation: 2.5W @ Ta and 6.3W @ Tc

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4395 $59.3325
325+ $0.3607 $117.2275
500+ $0.3494 $174.7000
685+ $0.3381 $231.5985
885+ $0.3269 $289.3065
1,185+ $0.2931 $347.3235
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,820 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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