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Same model may have multiple batches, images only for reference.
SI5435DC-T1-E3
Same model may have multiple batches, images only for reference.

SI5435DC-T1-E3

Part No SI5435DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 30V 5.6A 2.5W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 4.1 A
Drain to Source Resistance 50 mΩ
Drain to Source Voltage (Vdss) -30 V
Element Configuration Single
Fall Time 5 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.1 mm
Length 3.05 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.3 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 8
Power Dissipation 1.3 W
Rise Time 5 ns
RoHS Compliant
Turn-Off Delay Time 40 ns
Turn-On Delay Time 11 ns
Weight 84.99187 mg
Width 1.65 mm
Win Source Part Number 960398-SI5435DC-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI5435DC-T1-E3 CAD Model

Description

The Vishay SI5435DC-T1-E3 is a single element MOSFET transistor designed for use in RF applications. Bold the product name SI5435DC-T1-E3 and manufacturer Vishay.

  • Vdss: -30 V
  • Maximum Operating Temperature: 150 °C
  • ID: 4.1 A
  • Power Dissipation: 1.3 W
  • Rise Time: 5 ns
  • Fall Time: 5 ns
  • Turn-On Delay Time: 11 ns
  • Turn-Off Delay Time: 40 ns
  • Mounting Type: Surface Mountable
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,241 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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