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Same model may have multiple batches, images only for reference.
SI5441BDC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5441BDC-T1-GE3

Part No SI5441BDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.4A 1206-8
Datasheet
SI5441BDC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 22nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 4.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 1096085-SI5441BDC-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5441BDC-T1-GE3 CAD Model

Description

The Vishay SI5441BDC-T1-GE3 is a P-channel MOSFET that is a popular choice for discrete semiconductor products.

  • Manufacturer: Vishay
  • Product Name: SI5441BDC-T1-GE3
  • Channel Type: P-Channel
  • Power Dissipation: 1.3W
  • Temperature Range: -55°C to 150°C
  • Popularity: Medium
  • Supply and Demand Status: Balance
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.4A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5860 $63.4400
90+ $1.3015 $117.1350
140+ $1.2608 $176.5120
190+ $1.2201 $231.8190
245+ $1.1794 $288.9530
330+ $1.0574 $348.9420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 664 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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