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Same model may have multiple batches, images only for reference.
SI5473DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5473DC-T1-E3

Part No SI5473DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 5.9A 1206-8
Datasheet
SI5473DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 32nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 5.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 114145-SI5473DC-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5473DC-T1-E3 CAD Model

Description

The Vishay SI5473DC-T1-E3 is an electronic component that is used in various industrial applications.

  • Type: P-Channel MOSFET
  • Features: It comes with a range of features that make it a preferred choice for many
  • Performance: The component is designed to provide a stable performance and comes with a range of specifications that make it suitable for use in various electronic applications
  • Durability and Reliability: The component is known for its durability and reliability, making it a preferred choice for many
  • Supply and Demand Status: Limited

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