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SI5482DU-T1-E3

Part No SI5482DU-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 15 V
Power Dissipation (Max) 3.1W (Ta), 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
Base Product Number SI5482
Other Names SI5482DU-T1-E3TR,SI5482DU-T1-E3DKR,SI5482DUT1E3,SI5482DU-T1-E3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277558-SI5482DU-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI5482DU-T1-E3 CAD Model

Description

The SI5482DU-T1-E3 MOSFET is a N-channel metal oxide semiconductor field effect transistor designed for use in discrete semiconductor products such as single MOSFETs.

  • Drain-to-Source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id): 12A (Tc)
  • Maximum On-Resistance: 15mOhm @ 7.4A and 10V
  • Package: PowerPAK ChipFET Single package
  • Maximum Power Dissipation: 3.1W (Ta) and 31W (Tc)
  • Gate Charge (Qg): 51nC @ 10V
  • Input Capacitance (Ciss): 1610pF @ 15V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Compliance: REACH regulations

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