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Same model may have multiple batches, images only for reference.
SI5511DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5511DC-T1-E3

Part No SI5511DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 4A 1206-8
Datasheet
SI5511DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A, 3.6A
Maximum Rds On at Id,Vgs 55 mOhm @ 4.8A, 4.5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 7.1nC @ 5V
Max Input Capacitance 435pF @ 15V
Maximum Power Dissipation 3.1W, 2.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 106522-SI5511DC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5511DC-T1-E3 CAD Model

Description

The SI5511DC-T1-E3 is an N and P-Channel FET type transistor manufactured by Vishay.

  • Gate Feature: logic level gate
  • Category: discrete semiconductor products
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case / Package: 1206-8 ChipFET
  • Maximum Power Dissipation: 3.1W, 2.6W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 4A, 3.6A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Gate Charge: 7.1nC @ 5V
  • Max Input Capacitance: 435pF @ 15V
  • Maximum Rds On at Id, Vgs: 55 mOhm @ 4.8A, 4.5V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2691 $57.8565
525+ $0.2218 $116.4450
810+ $0.2148 $173.9880
1,115+ $0.2079 $231.8085
1,440+ $0.2010 $289.4400
1,925+ $0.1802 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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