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Same model may have multiple batches, images only for reference.
SI5513DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5513DC-T1-E3

Part No SI5513DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 3.1A 1206-8
Datasheet
SI5513DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.1A, 2.1A
Maximum Rds On at Id,Vgs 75 mOhm @ 3.1A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 6nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 028579-SI5513DC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5513DC-T1-E3 CAD Model

Description

The Vishay 028579-SI5513DC-T1-E3 is a logic level gate N and P-channel FET chip that comes in a 1206-8 ChipFET package.

  • FET Type: FET type is ideal for use in discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 3.1A and 2.1A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 6nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 4.5V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4414 $59.5890
320+ $0.3622 $115.9040
495+ $0.3509 $173.6955
685+ $0.3396 $232.6260
880+ $0.3283 $288.9040
1,180+ $0.2943 $347.2740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,200 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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