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Same model may have multiple batches, images only for reference.
SI5513DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5513DC-T1-GE3

Part No SI5513DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.1A, 2.1A
Rds On (Max) @ Id, Vgs 75mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Power - Max 1.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Product Number SI5513
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278455-SI5513DC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5513DC-T1-GE3 CAD Model

Description

The SI5513DC-T1-GE3 is a MOSFET transistor from Vishay Siliconix.

  • Series: TrenchFET
  • Package: Tape and Reel (TR)
  • Standard Package: 3,000
  • Mounting Type: SMD (SMT)
  • FET Type: N and P-Channel
  • Gate: Logic Level
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.1A and 2.1A @ 25°C
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power: 1.1W
  • Package: 8-SMD, flat lead
  • Supplier Device Package: 1206-8 ChipFET™
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Temperature Range: -55°C ~ 150°C (TJ)

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