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Same model may have multiple batches, images only for reference.
SI5857DU-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5857DU-T1-GE3

Part No SI5857DU-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series LITTLE FOOT®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.3W (Ta), 10.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
Base Product Number SI5857
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277698-SI5857DU-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5857DU-T1-GE3 CAD Model

Description

The Vishay SI5857DU-T1-GE3 is a P-channel MOSFET transistor with a Schottky diode (isolated) feature.

  • Series: LITTLE FOOT
  • Package: DO-214AC, SMA
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Power Dissipation: 2.3W (Ta), 10.4W (Tc)
  • Temperature Range: -55°C to 150°C
  • Device Package: PowerPAK ChipFET™ Single
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Status: Obsolete

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