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Same model may have multiple batches, images only for reference.
SI5904DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5904DC-T1-GE3

Part No SI5904DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 3.1A 1206-8
Datasheet
SI5904DC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.1A
Maximum Rds On at Id,Vgs 75 mOhm @ 3.1A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 6nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 1096094-SI5904DC-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5904DC-T1-GE3 CAD Model

Description

The SI5904DC-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay.

  • Applications: power management, motor control, and lighting systems.
  • Gate: logic level gate
  • Maximum Drain-Source Voltage: 20V
  • Continuous Drain Current: 3.1A
  • On-Resistance: 75mOhm
  • Designed to provide: high efficiency and low power dissipation

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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