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Same model may have multiple batches, images only for reference.
SI5905DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5905DC-T1-E3

Part No SI5905DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 3A 1206-8
Datasheet
SI5905DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 90 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 9nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 098483-SI5905DC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5905DC-T1-E3 CAD Model

Description

This P-channel dual FET from Vishay is a high-quality electronic component designed to provide reliable performance in a wide range of applications. With a maximum power dissipation of 1.1W and a continuous drain current of 3A, this FET is ideal for use in circuits that require a high level of precision and stability.

  • Maximum Power Dissipation: 1.1W
  • Continuous Drain Current: 3A
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Rds On @ Id,Vgs: 90 mOhm @ 3A, 4.5V
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7831 $58.7325
180+ $0.6426 $115.6680
280+ $0.6225 $174.3000
385+ $0.6024 $231.9240
500+ $0.5824 $291.2000
665+ $0.5221 $347.1965
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,900 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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