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Same model may have multiple batches, images only for reference.
SI7344DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7344DP-T1-E3

Part No SI7344DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 11A PPAK SO-8
Datasheet
SI7344DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 115283-SI7344DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7344DP-T1-E3 CAD Model

Description

The Vishay 115283-SI7344DP-T1-E3 MOSFET is a part of the Discrete Semiconductor Products category.

  • Channel Type: N-channel MOSFET
  • Package: PowerPAK SO-8
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 4.5V, 10V
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 11A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.1V @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Rds On: 8 mOhm @ 17A, 10V
  • Package: reel - TR
  • Popularity: medium

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