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Same model may have multiple batches, images only for reference.
SI6413DQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6413DQ-T1-E3

Part No SI6413DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7.2A 8TSSOP
Datasheet
SI6413DQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 400μA
Max Gate Charge 105nC @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 8.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 064540-SI6413DQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6413DQ-T1-E3 CAD Model

Description

The SI6413DQ-T1-E3 from Vishay is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 7.2A.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7.2A
  • Maximum Rds On: 10 mOhm @ 8.8A, 4.5V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,825 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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