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SI6435ADQ-T1-E3

Part No SI6435ADQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.7A 8-TSSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 20nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 133999-SI6435ADQ-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI6435ADQ-T1-E3 CAD Model

Description

The Vishay MOSFET is a P-channel power MOSFET designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.7A
  • Maximum Rds On @ Id, Vgs: 30 mOhm @ 5.5A, 10V
  • Gate-Source Threshold Voltage @ 250μA (Min): 1V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge @ 5V: 20nC
  • Package: 8-TSSOP
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: SMD (SMT)
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4692 $58.6500
305+ $0.3850 $117.4250
465+ $0.3730 $173.4450
640+ $0.3610 $231.0400
830+ $0.3490 $289.6700
1,110+ $0.3128 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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