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Same model may have multiple batches, images only for reference.
SI6469DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6469DQ-T1-GE3

Part No SI6469DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 8TSSOP
Datasheet
SI6469DQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 40nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 120828-SI6469DQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6469DQ-T1-GE3 CAD Model

Description

The SI6469DQ-T1-GE3 is a P-channel MOSFET transistor manufactured by Vishay.

  • Mounting Type: Surface mount
  • Power Dissipation: 1.5W (Ta)
  • Drive Voltage (max Rds On): 1.8V
  • Drive Voltage (min Rds On): 4.5V
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Rds On @ 6A, 4.5V: 28 mOhm
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge @ 4.5V: 40nC
  • Temperature Range: -55°C to 150°C
  • Packaging: Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9656 $57.9360
150+ $0.7923 $118.8450
230+ $0.7676 $176.5480
315+ $0.7428 $233.9820
405+ $0.7181 $290.8305
540+ $0.6438 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,620 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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