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Same model may have multiple batches, images only for reference.
SI6866BDQ-T1-E3
Same model may have multiple batches, images only for reference.

SI6866BDQ-T1-E3

Part No SI6866BDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual MOSFETs 20V 5.8A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 6 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 27 mΩ
Element Configuration Dual
Fall Time 53 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 1.2 W
Rise Time 53 ns
RoHS Compliant
Turn-Off Delay Time 30 ns
Win Source Part Number 1019453-SI6866BDQ-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI6866BDQ-T1-E3 CAD Model

Description

The Vishay SI6866BDQ-T1-E3 is a dual MOSFET transistor that is designed for use in various electronic devices.

  • Continuous Drain Current: 6A
  • Drain to Source Breakdown Voltage: 20V
  • Supply: Shortage

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