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Same model may have multiple batches, images only for reference.
SI7108DN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI7108DN-T1-GE3

Part No SI7108DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 14A 1212-8
Datasheet
SI7108DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 30nC @ 4.5V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028595-SI7108DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7108DN-T1-GE3 CAD Model

Description

The SI7108DN-T1-GE3 is an N-channel MOSFET from Vishay.

  • Package: reel - TR
  • Power Dissipation: 1.5W (Ta)
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 14A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Gate Charge: 30nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 4.9 mOhm @ 22A, 10V
  • Product Type: EAR99
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Ideal for: power management and consumer electronics

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Quantity Unit Price Ext. Price
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180+ $0.5674 $102.1320
275+ $0.5497 $151.1675
380+ $0.5320 $202.1600
490+ $0.5142 $251.9580
655+ $0.4610 $301.9550
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Availability: 11,400 pieces
MOQ: 75 pcs
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