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Same model may have multiple batches, images only for reference.
SI7686DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7686DP-T1-GE3

Part No SI7686DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A PPAK SO-8
Datasheet
SI7686DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1220pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 37.9W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 13.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 046878-SI7686DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7686DP-T1-GE3 CAD Model

Description

The 046878-SI7686DP-T1-GE3 is an N-channel MOSFET from Vishay.

  • Type: N-channel MOSFET
  • Mounting: Surface-mount device (SMD)
  • Power Dissipation: 5W (Ta) and 37.9W (Tc)
  • Drive Voltage: 4.5V, 10V (Max Rds On, Min Rds On)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 35A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Supplier Device Package: PowerPAK SO-8
  • Temperature Range: -55°C to 150°C (TJ)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0373 $62.2380
140+ $0.8512 $119.1680
215+ $0.8246 $177.2890
290+ $0.7980 $231.4200
375+ $0.7715 $289.3125
505+ $0.6916 $349.2580
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