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Same model may have multiple batches, images only for reference.
SI7116DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7116DN-T1-E3

Part No SI7116DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 10.5A 1212-8
Datasheet
SI7116DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 16.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028603-SI7116DN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7116DN-T1-E3 CAD Model

Description

It has a limited supply and demand status.

  • Win Source Part Number: 028603-SI7116DN-T1-E3
  • Technology: MOSFET
  • Maximum Power Dissipation: 1.5W (Ta)
  • Drain-Source Breakdown Voltage: 40V
  • Description: reliable and durable component that can be used in various applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.4109 $52.9308
28+ $3.6192 $101.3376
43+ $3.5061 $150.7623
59+ $3.3930 $200.1870
77+ $3.2799 $252.5523
103+ $2.9406 $302.8818
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Availability: 3,306 pieces
MOQ: 12 pcs
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