The SI7170DP-T1-E3 is a P-channel MOSFET from Vishay Siliconix. This MOSFET is designed for load switching and power management applications requiring low on-resistance and high efficiency. It is commonly used in DC-DC converters, power supplies, and battery management systems.

Applications

• DC-DC converters
• Power supplies
• Battery management systems
• Load switching
• Power management

Features

• Low on-resistance (RDS(on))
• High current capability
• Low gate charge
• Fast switching speed
• TrenchFET® power MOSFET technology
• Halogen-free
• RoHS compliant

Benefits

• Reduces power loss and improves efficiency
• Handles high current loads
• Minimizes switching losses
• Enables high-frequency operation
• Provides superior performance and reliability
• Environmentally friendly

Additional Details

The SI7170DP-T1-E3 features a maximum drain-source voltage (VDS) of -30V and a typical on-resistance (RDS(on)) of 10 mΩ at a gate-source voltage (VGS) of -10V. It has a continuous drain current (ID) rating of -15A. The gate charge (Qg) is typically 15 nC. This MOSFET utilizes Vishay's TrenchFET® power MOSFET technology, which optimizes the trade-off between on-resistance and gate charge. It is designed for surface mount assembly. Vishay's commitment to quality ensures the SI7170DP-T1-E3 MOSFET provides reliable performance in demanding applications. The T1 suffix indicates tape and reel packaging and the E3 suffix indicates lead (Pb)-free and RoHS compliance.