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Same model may have multiple batches, images only for reference.
SI7186DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7186DP-T1-GE3

Part No SI7186DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 32A PPAK SO-8
Datasheet
SI7186DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2840pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 64W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096146-SI7186DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7186DP-T1-GE3 CAD Model

Description

The SI7186DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 32A (Tc)
  • Maximum Rds On @ Id, Vgs: 12.5 mOhm @ 10A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK SO-8
  • Mounting Technology: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Popularity: Medium

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127+ $2.7467 $348.8309
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Availability: 4,300 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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