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SI7196DP-T1-GE3

Part No SI7196DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1577pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 41.6W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 114395-SI7196DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7196DP-T1-GE3 CAD Model

Description

The Vishay 114395-SI7196DP-T1-GE3 is an N-channel PowerPAK SO-8 packaged MOSFET transistor.

  • Manufacturer: Vishay
  • Channel Type: N-channel
  • Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A @ 25°C
  • Maximum Rds On (Id,Vgs): 11 mOhm @ 12A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 1577pF @ 15V
  • Power Dissipation: 5W (Ta), 41.6W (Tc)
  • Status: Obsolete
  • Popularity: Medium
  • Supply and Demand: Balanced

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