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Same model may have multiple batches, images only for reference.
SI7230DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7230DN-T1-E3

Part No SI7230DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A PPAK 1212-8
Datasheet
SI7230DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 211663-SI7230DN-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7230DN-T1-E3 CAD Model

Description

The SI7230DN-T1-E3 from Vishay is a MOSFET that is part of the discrete semiconductor products category.

  • Manufacturer: Vishay
  • Category: Discrete Semiconductor Products
  • Popularity: High
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A (Ta) @ 25°C
  • Maximum Rds On (Id,Vgs): 12 mOhm @ 14A, 10V
  • Package: PowerPAK 1212-8
  • Mounting: SMD (SMT)
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9656 $57.9360
150+ $0.7923 $118.8450
230+ $0.7676 $176.5480
315+ $0.7428 $233.9820
405+ $0.7181 $290.8305
540+ $0.6438 $347.6520
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