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Same model may have multiple batches, images only for reference.
SI4686DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4686DY-T1-E3

Part No SI4686DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18.2A 8-SOIC
Datasheet
SI4686DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1220pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 5.2W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 13.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028519-SI4686DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4686DY-T1-E3 CAD Model

Description

The Vishay SI4686DY-T1-E3 is an active electronic component that is widely used in various applications.

  • Manufacturer: Vishay
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power dissipation: 3W (Ta), 5.2W (Tc)
  • Drive voltage: 4.5V, 10V
  • Operating temperature range: -55°C to 150°C (TJ)
  • Packaging: Reel - TR
  • Mounting technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7467 $59.7360
190+ $0.6128 $116.4320
295+ $0.5936 $175.1120
405+ $0.5745 $232.6725
520+ $0.5553 $288.7560
700+ $0.4978 $348.4600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,200 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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