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Same model may have multiple batches, images only for reference.
SI7322DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7322DN-T1-E3

Part No SI7322DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A PPAK 1212-8
Datasheet
SI7322DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 750pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 58 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096153-SI7322DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7322DN-T1-E3 CAD Model

Description

The Vishay SI7322DN-T1-E3 is an N-channel MOSFET.

  • Product Name: SI7322DN-T1-E3
  • Manufacturer: Vishay
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 18A
  • Maximum Rds On @ Id,Vgs: 58 mOhm @ 5.5A, 10V
  • Gate-Source Threshold Voltage @ 250μA: 4.4V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge @ 10V: 20nC
  • Package: PowerPAK 1212-8
  • Power Dissipation: 3.8W (Ta), 52W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1348 $62.4140
125+ $0.9312 $116.4000
195+ $0.9021 $175.9095
265+ $0.8729 $231.3185
345+ $0.8438 $291.1110
460+ $0.7565 $347.9900
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Availability: 23,827 pieces
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