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Same model may have multiple batches, images only for reference.
SI7401DN-T1
Same model may have multiple batches, images only for reference.

SI7401DN-T1

Part No SI7401DN-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 20V 11A 3.8W
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 7.3 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 21 mΩ
Element Configuration Single
Fall Time 95 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Number of Pins 8
Power Dissipation 1.5 W
Rise Time 45 ns
RoHS Non-Compliant
Turn-Off Delay Time 130 ns
Win Source Part Number 983423-SI7401DN-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI7401DN-T1 CAD Model

Description

The Vishay SI7401DN-T1 is an RF MOSFET transistor that has a power dissipation of 1.5 W and a continuous drain current (ID) of 7.3 A.

  • Power Dissipation: 1.5 W
  • Continuous Drain Current (ID): 7.3 A
  • Drain-to-Source Breakdown Voltage: 20 V
  • Gate-to-Source Voltage (Vgs): 8 V
  • Rise Time: 45 ns
  • Fall Time: 95 ns
  • Drain-to-Source Resistance: 21 mΩ
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Pins: 8
  • RoHS Compliance: Non-compliant
  • Configuration: Single element

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160+ $2.1760 $348.1600
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Availability: 1,167 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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