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Same model may have multiple batches, images only for reference.
SI7403BDN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7403BDN-T1-E3

Part No SI7403BDN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8A 1212-8
Datasheet
SI7403BDN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 8V
Max Input Capacitance 430pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.1W (Ta), 9.6W (Tc)
Maximum Rds On at Id,Vgs 74 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096160-SI7403BDN-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7403BDN-T1-E3 CAD Model

Description

The Vishay SI7403BDN-T1-E3 is a P-channel MOSFET suitable for use in industrial power management applications.

  • Power Dissipation: 3.1W (Ta), 9.6W (Tc)
  • Continuous Drain Current: 8A (Tc) @ 25°C
  • Rds On: 74 mOhm @ 5.1A, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Package: PowerPAK 1212-8
  • Maximum Gate-Source Voltage: ±8V
  • Status: Obsolete (EOL)
  • Supply and Demand: Sufficient

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95+ $1.2526 $118.9970
145+ $1.2134 $175.9430
200+ $1.1743 $234.8600
255+ $1.1353 $289.5015
345+ $1.0178 $351.1410
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