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Same model may have multiple batches, images only for reference.
SI7431DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7431DP-T1-E3

Part No SI7431DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 2.2A PPAK SO-8
Datasheet
SI7431DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 135nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 174 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 142652-SI7431DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7431DP-T1-E3 CAD Model

Description

The Vishay SI7431DP-T1-E3 is a MOSFET transistor used in discrete semiconductor products.

  • Polarity: P-channel
  • Power Dissipation (Max): 1.9W (Ta)
  • Case/Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current at 25°C: 2.2A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.7548 $54.0384
19+ $5.5424 $105.3056
28+ $5.3692 $150.3376
39+ $5.1960 $202.6440
50+ $5.0228 $251.1400
67+ $4.5032 $301.7144
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Availability: 6,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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