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Same model may have multiple batches, images only for reference.
SI7434DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7434DP-T1-E3

Part No SI7434DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 2.3A PPAK SO-8
Datasheet
SI7434DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 50nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 155 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096165-SI7434DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7434DP-T1-E3 CAD Model

Description

The Vishay SI7434DP-T1-E3 MOSFET is a high-performance N-Channel power MOSFET that is ideal for use in discrete semiconductor products.

  • Polarity: N-Channel
  • Power Dissipation (Max): 1.9W
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 2.3A
  • Gate-Source Threshold Voltage @ 250μA: 4V @ 250μA
  • Maximum Gate Charge @ 10V: 50nC @ 10V
  • Maximum Rds On @ 3.8A and 10V: 155 mOhm @ 3.8A, 10V
  • Drive Voltage: 6V and 10V for max Rds On and min Rds On
  • Operating Temperature: -55°C and 150°C
  • Package: PowerPAK SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9324 $52.7832
42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
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Availability: 3,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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