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SI7439DP-T1-GE3 Real Image SI7439DP-T1-GE3 real image5487 SI7439DP-T1-GE3 Real Image
SI7439DP-T1-GE3 Real Image SI7439DP-T1-GE3 real image5487 SI7439DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7439DP-T1-GE3

Part No SI7439DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 150V 3A 8-Pin PowerPAK SO T/R / MOSFET P-CH 150V 3A PPAK SO-8
Datasheet
SI7439DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 135nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 102467-SI7439DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Family Name Si7439DP
Introduction Date August 13, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7439DP-T1-GE3 CAD Model

Description

The Vishay 102467-SI7439DP-T1-GE3 is a MOSFET P-Channel transistor that is widely used in electronic devices.

  • Maximum Power Dissipation: 1.9W (Ta)
  • Drain-Source Breakdown Voltage: 150V
  • Packaging: PowerPAK SO-8
  • Popularity: High
  • Halogen-Free: Yes
  • Estimated EOL Date: 2027

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35+ $4.8560 $169.9600
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62+ $4.5427 $281.6474
83+ $4.0728 $338.0424
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