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Same model may have multiple batches, images only for reference.
SI7447ADP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7447ADP-T1-E3

Part No SI7447ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 35A PPAK 1212-8
Datasheet
SI7447ADP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 4650pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 5.4W (Ta), 83.3W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028642-SI7447ADP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7447ADP-T1-E3 CAD Model

Description

The Vishay 028642-SI7447ADP-T1-E3 is a P-channel MOSFET electronic component with a drain-source breakdown voltage of 30V and a continuous drain current of 35A (Tc) at 25°C.

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 150nC @ 10V
  • Maximum Rds On at Id,Vgs: 6.5 mOhm @ 24A, 10V
  • Maximum Gate-Source Voltage: ±25V
  • Mounting Technology: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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