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Same model may have multiple batches, images only for reference.
SI7454CDP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7454CDP-T1-GE3

Part No SI7454CDP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 22A PPAK SO-8
Datasheet
SI7454CDP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 19.5nC @ 10V
Max Input Capacitance 580pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.1W (Ta), 29.7W (Tc)
Maximum Rds On at Id,Vgs 30.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 114104-SI7454CDP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7454CDP-T1-GE3 CAD Model

Description

The Vishay electronic component is a MOSFET technology with an N-channel polarity.

  • Power Dissipation: 4.1W (Ta), 29.7W (Tc)
  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 22A (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Max Gate Charge: 19.5nC @ 10V
  • Maximum Input Capacitance: 580pF @ 50V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range for Operating: -55°C to 150°C (TJ)
  • Case/Package: PowerPAK SO-8

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Quantity Unit Price Ext. Price
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48+ $2.4146 $115.9008
75+ $2.3393 $175.4475
103+ $2.2638 $233.1714
132+ $2.1883 $288.8556
177+ $1.9619 $347.2563
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