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SI7460DP-T1-GE3

Part No SI7460DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 11A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 100nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 9.6 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 129761-SI7460DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian SI7460DP-T1-GE3 CAD Model

Description

SI7460DP-T1-GE3 from Vishay is an RF MOSFET component used in designs where switching or amplification behavior is important in high-frequency signal paths. Engineers may consider this device for RF-related power stages, signal conditioning blocks, wireless infrastructure subcircuits, test equipment, and other compact electronic systems that require dependable semiconductor performance from an established supplier. As part of Vishay’s portfolio, it is positioned for designers seeking recognized brand support and broad sourcing visibility, especially in repair, maintenance, and ongoing production environments. Because the exact lifecycle status provided here is unknown, teams should confirm current production status directly through Vishay or authorized channel partners before locking it into new designs. RoHS compliance information is also not available in the supplied data, so environmental status should be verified using the latest manufacturer datasheet, compliance certificate, or distributor documentation before procurement for regulated markets.

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