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SI7478DP-T1-GE3

Part No SI7478DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15A PPAK SO-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 160nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096175-SI7478DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7478DP-T1-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance electronic component suitable for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 15A (Ta)
  • Mounting Type: SMD (SMT)
  • Package: Reel
  • Drive Voltage: 4.5V, 10V (Max Rds On, Min Rds On)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On @ Id,Vgs: 7.5 mOhm @ 20A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.1045 $58.2090
5+ $23.8806 $119.4030
7+ $23.1344 $161.9408
9+ $22.3881 $201.4929
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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