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Same model may have multiple batches, images only for reference.
SI7491DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7491DP-T1-E3

Part No SI7491DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11A PPAK SO-8
Datasheet
SI7491DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 85nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 122903-SI7491DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7491DP-T1-E3 CAD Model

Description

The SI7491DP-T1-E3 electronic component is a commonly used part manufactured by Vishay.

  • Power Dissipation: 1.8W (Ta)
  • Polarity: P-Channel
  • Maximum Rds on at Id,Vgs: 8.5 mOhm @ 18A, 10V
  • Temperature Range for Operating: -55°C to 150°C (TJ)

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90+ $1.3444 $120.9960
135+ $1.3017 $175.7295
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320+ $1.0915 $349.2800
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