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Same model may have multiple batches, images only for reference.
SI7495DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7495DP-T1-E3

Part No SI7495DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 13A PPAK SO-8
Datasheet
SI7495DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 1mA
Max Gate Charge 140nC @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 21A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 143028-SI7495DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7495DP-T1-E3 CAD Model

Description

This MOSFET is manufactured by Vishay and has a Win Source Part Number of 143028-SI7495DP-T1-E3.

  • Packaging: reel-TR
  • Mounting: SMD (SMT)
  • Polarity: P-Channel
  • Power Dissipation: 1.8W (Ta)
  • Drive Voltage: 1.8V, 4.5V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PowerPAK SO-8
  • Dimension: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 13A (Ta)
  • Gate-Source Threshold Voltage: 900mV @ 1mA
  • Maximum Gate Charge: 140nC @ 5V
  • Maximum Rds On at Id,Vgs: 6.5 mOhm @ 21A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4280 $58.2720
58+ $1.9921 $115.5418
90+ $1.9299 $173.6910
124+ $1.8676 $231.5824
160+ $1.8054 $288.8640
215+ $1.6186 $347.9990
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Availability: 5,187 pieces
MOQ: 24 pcs
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