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Same model may have multiple batches, images only for reference.
SI7309DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7309DN-T1-E3

Part No SI7309DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 8A 1212-8
Datasheet
SI7309DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.2W (Ta), 19.8W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 3.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028623-SI7309DN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7309DN-T1-E3 CAD Model

Description

The Vishay Si7309DN is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.2W (Ta), 19.8W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On: 115 mOhm @ 3.9A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Package: PowerPAK 1212-8
  • Dimension: PowerPAK 1212-8
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6897 $58.6245
205+ $0.5660 $116.0300
320+ $0.5483 $175.4560
440+ $0.5306 $233.4640
565+ $0.5128 $289.7320
755+ $0.4598 $347.1490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,900 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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