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Same model may have multiple batches, images only for reference.
SI7601DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7601DN-T1-GE3

Part No SI7601DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 16A 1212-8 / Trans MOSFET P-CH 20V 16A 8-Pin PowerPAK 1212 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 1.6V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 27nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 1870pF @ 10V
Vgs (Maximum) ±12V
Power Dissipation (Maximum) 3.8W (Ta), 52W (Tc)
Rds On (Maximum) @ Id, Vgs 19.2 mOhm @ 11A, 4.5V
Operating Temperature Range -50°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK 1212-8
Package PowerPAK 1212-8
Win Source Part Number 794319-SI7601DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7601DN
Introduction Date August 28, 2007
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7601DN-T1-GE3 CAD Model

Description

The SI7601DN-T1-GE3 is a high-quality MOSFET from Vishay Siliconix.

  • P-channel Type MOSFET: P-channel
  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 16A (Tc)
  • Gate-Source Voltage(th) (maximum): 1.6V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (maximum) @ Vds: 1870pF @ 10V
  • Temperature Range: -50°C ~ 150°C (TJ)
  • Package: PowerPAK 1212-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.8333 $54.1665
12+ $8.8889 $106.6668
18+ $8.6111 $154.9998
25+ $8.3333 $208.3325
32+ $8.0556 $257.7792
42+ $7.2223 $303.3366
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