The Vishay 1096184-SI7613DN-T1-GE3 is a P-Channel MOSFET with a maximum power dissipation of 3.8W (Ta) and 52.1W (Tc) and 20V drain-source breakdown voltage.

• Manufacturer: Vishay
• Channel Polarity: P-Channel
• Maximum Power Dissipation: 3.8W (Ta), 52.1W (Tc)
• Drain-Source Breakdown Voltage: 20V
• Maximum Rds On @ Id,Vgs: 8.7 mOhm @ 17A, 10V
• Gate-Source Threshold Voltage: 2.2V @ 250μA
• Maximum Gate-Source Voltage: ±16V
• Maximum Gate Charge: 87nC @ 10V
• Package: PowerPAK 1212-8
• Operating Temperature Range: -50°C to 150°C (TJ)
• Continuous Drain Current: 35A (Tc)
• Status: Active
• Packaging: Reel - TR
• Alternative Parts: CSD25402Q3A, FDMC612PZ, and Si7613DN