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SI7615DN-T1-GE3

Part No SI7615DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 35A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 183nC @ 10V
Max Input Capacitance 6000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 109913-SI7615DN-T1-GE3
Family Name Si7615DN
Introduction Date March 17, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian SI7615DN-T1-GE3 CAD Model

Description

The Vishay 109913-SI7615DN-T1-GE3 is a high-popularity P-channel polarity MOSFET from the Si7615DN family.

  • Power Dissipation: 3.7W (Ta), 52W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Maximum Rds On at Id, Vgs: 3.9 mOhm @ 20A, 10V
  • Maximum Gate Charge: 183nC @ 10V
  • Maximum Input Capacitance: 6000pF @ 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK 1212-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3737 $54.9480
90+ $1.1272 $101.4480
140+ $1.0920 $152.8800
190+ $1.0567 $200.7730
245+ $1.0215 $250.2675
330+ $0.9158 $302.2140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,800 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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