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SI7806ADN-T1-E3

Part No SI7806ADN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028665-SI7806ADN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7806ADN-T1-E3 CAD Model

Description

The Vishay 028665-SI7806ADN-T1-E3 is a MOSFET N-channel power transistor that belongs to the Discrete Semiconductor Products category.

  • Component Type: MOSFET N-channel power transistor
  • Category: Discrete Semiconductor Products
  • Manufacturer: Vishay
  • Availability: Available at Win Source
  • Supply and Demand Status: Balanced
  • Package: PowerPAK 1212-8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 9A (Ta)
  • Maximum Rds On at Id,Vgs: 11 mOhm @ 14A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4015 $58.2175
355+ $0.3296 $117.0080
545+ $0.3192 $173.9640
750+ $0.3088 $231.6000
970+ $0.2986 $289.6420
1,295+ $0.2677 $346.6715
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,200 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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