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Same model may have multiple batches, images only for reference.
SI7848BDP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7848BDP-T1-GE3

Part No SI7848BDP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 47A PPAK SO-8
Datasheet
SI7848BDP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 2000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.2W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 042624-SI7848BDP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7848BDP-T1-GE3 CAD Model

Description

The electronic component with Id 329993 is an N-Channel MOSFET from the manufacturer Vishay.

  • Supply and Demand Status: limited
  • Status: active
  • Maximum Power Dissipation: 4.2W (Ta), 36W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 47A (Tc)
  • Package: PowerPAK SO-8
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id,Vgs: 9 mOhm @ 16A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4923 $52.2305
85+ $1.2245 $104.0825
130+ $1.1862 $154.2060
175+ $1.1480 $200.9000
230+ $1.1097 $255.2310
305+ $0.9949 $303.4445
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,708 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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