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SI7852DP-T1-GE3

Part No SI7852DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 7.6A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 2V @ 250μA (Min)
Max Gate Charge 41nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 322837-SI7852DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7852DP-T1-GE3 CAD Model

Description

The Vishay SI7852DP-T1-GE3 is a MOSFET with N-Channel polarity and a Drain-Source Breakdown Voltage of 80V.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 7.6A
  • Power Dissipation: 1.9W (Ta)
  • Drive Voltage: 6V (Max Rds On) and 10V (Min Rds On)
  • Maximum Rds On @ Id,Vgs: 16.5 mOhm @ 10A, 10V
  • Package: PowerPAK SO-8
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: common-used part with high popularity in the market

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Pricing & Ordering

Quantity Unit Price Ext. Price
32+ $1.5848 $50.7136
68+ $1.4845 $100.9460
105+ $1.4343 $150.6015
150+ $1.3340 $200.1000
195+ $1.2839 $250.3605
244+ $1.2337 $301.0228
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,348 pieces
MOQ: 32 pcs
Order Increment : 1 pcs
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