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Same model may have multiple batches, images only for reference.
SI7922DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7922DN-T1-E3

Part No SI7922DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R / MOSFET 2N-CH 100V 1.8A 1212-8
Datasheet
SI7922DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.8A
Maximum Rds On at Id,Vgs 195 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 8nC @ 10V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 028692-SI7922DN-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si7922DN
Introduction Date November 05, 2002
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7922DN-T1-E3 CAD Model

Description

The Vishay SI7922DN-T1-E3 is a dual N-channel FET with a drain-source breakdown voltage of 100V and a maximum power dissipation of 1.3W.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Power Dissipation: 1.3W
  • Continuous Drain Current: 1.8A
  • Gate-Source Threshold Voltage: 3.5V @ 250μA
  • Package: PowerPAK 1212-8 Dual
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3095 $58.9275
110+ $1.0745 $118.1950
170+ $1.0410 $176.9700
230+ $1.0074 $231.7020
300+ $0.9738 $292.1400
400+ $0.8731 $349.2400
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