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SI7922DN-T1-GE3

Part No SI7922DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R / MOSFET 2N-CH 100V 1.8A 1212-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.8A
Maximum Rds On at Id,Vgs 195 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 8nC @ 10V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 064581-SI7922DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si7922DN
Introduction Date November 05, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7922DN-T1-GE3 CAD Model

Description

The SI7922DN-T1-GE3 is a dual N-channel logic level gate FET type designed for discrete semiconductor products.

  • FET Type: Dual N-Channel Logic Level Gate
  • Mounting Type: SMD (SMT)
  • Case/Package: PowerPAK 1212-8 Dual
  • Maximum Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25 degrees Celsius: 1.8A
  • Gate-Source Threshold Voltage: 3.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 195 mOhm @ 2.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3681 $54.7240
90+ $1.1226 $101.0340
140+ $1.0875 $152.2500
195+ $1.0524 $205.2180
250+ $1.0174 $254.3500
330+ $0.9121 $300.9930
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Availability: 15,796 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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