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SI7923DN-T1-E3

Part No SI7923DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R / MOSFET 2P-CH 30V 4.3A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.3A
Maximum Rds On at Id,Vgs 47 mOhm @ 6.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 21nC @ 10V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 028693-SI7923DN-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si7923DN
Introduction Date December 04, 2003
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7923DN-T1-E3 CAD Model

Description

The Vishay 028693-SI7923DN-T1-E3 is a dual P-channel FET that is designed for use in a wide range of applications.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.3A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge @ 10V: 21nC
  • Maximum Input Capacitance:
  • Maximum Rds On @ 6.4A and 10V: 47 mOhm
  • Temperature Range: -55°C to 150°C
  • Status: Active
  • Packaging: Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6195 $150.6135
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3583 $300.1843
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,900 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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