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SI7942DP-T1-GE3

Part No SI7942DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R / MOSFET 2N-CH 100V 3.8A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.8A
Maximum Rds On at Id,Vgs 49 mOhm @ 5.9A, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 24nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 130209-SI7942DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si7942DP
Introduction Date February 27, 2003
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7942DP-T1-GE3 CAD Model

Description

The SI7942DP-T1-GE3 is a 2 N-channel (dual) MOSFET with logic level gate manufactured by Vishay.

  • Popularity: High
  • Status: Active
  • Supply and Demand Status: Balance
  • Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On @ 5.9A, 10V: 49 mOhm

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4075 $57.7800
59+ $1.9754 $116.5486
91+ $1.9138 $174.1558
125+ $1.8519 $231.4875
162+ $1.7903 $290.0286
216+ $1.6050 $346.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,712 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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