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Same model may have multiple batches, images only for reference.
SI7945DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7945DP-T1-E3

Part No SI7945DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 7A PPAK SO-8
Datasheet
SI7945DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 20 mOhm @ 10.9A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 74nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 122864-SI7945DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7945DP-T1-E3 CAD Model

Description

The Vishay SI7945DP-T1-E3 is an obsolete electronic component that belongs to the category of discrete semiconductor products.

  • Package: powerPAK SO-8 dual
  • FET Type: 2 P-channel (Dual)
  • FET Feature: Logic level gate
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 7A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge @ 10V: 74nC
  • Maximum Rds on @ 10.9A, 10V: 20 mOhm
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3539 $58.8475
60+ $1.9312 $115.8720
93+ $1.8711 $174.0123
128+ $1.8110 $231.8080
166+ $1.7498 $290.4668
221+ $1.5696 $346.8816
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Availability: 1,485 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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